砷化镓基板
本公司的砷化镓基板大量应用于DVD等激光设备以及LED、手机等电子设备，用途广泛。
用途
- 应用于大功率LD、VCSEL、Micro LED及显示屏LED基板。
高功率工业用激光器
产品特点
- 通过VGF法和LEC法培养单晶。
- 拥有高度控制载流子浓度、低EPD等特点。
产品特点
VGF-n 型
| VGF-n 型, LD grade | VGF-n 型, LED grade | |||||||
| Crystal growth method | VGF (vertical gradient freezing) method | VGF (vertical gradient freezing) method | ||||||
| Dopant and conductive type | N type: Si-doped | N type: Si-doped | ||||||
| Carrier density | N-type (0.4-4)×1018 cm-3 (Adjustable within the above range) |
N-type (0.4-4)×1018 cm-3 (Adjustable within the above range) |
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| Dislocation density(EPD) (cm-2) |
EPDave</=500(LED) EPDmax</=5000(LED) |
EPDave</=500(LED) EPDmax</=5000(LED) |
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| Size | 6-inch | 4-inch | 3-inch | 2-inch | 6-inch | 4-inch | 3-inch | 2-inch |
| Plane orientation |
1. (100)±0.1° 2. (100) off α°±0.1° towards (011) or (01-1) etc. 3. We will aim to meet your requests. |
1. (100)±0.1° 2. (100) off α°±0.1° towards (011) or (01-1) etc. 3. We will aim to meet your requests. |
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| Diameter (mm) |
150.0±0.1 | 100.0±0.1 | 76.0±0.1 76.2±0.1 |
50.0±0.1 50.8±0.1 |
150.0±0.2 | 100.0±0.2 | 76.0±0.2 76.2±0.2 |
50.0±0.2 50.8±0.2 |
| Thickness (μm) |
450-675 ±15 |
350-625 ±15 |
300-600 ±15 |
240-450 ±15 |
450-675 ±20 |
350-625 ±20 |
300-600 ±20 |
240-450 ±20 |
|
Orientation flat length OF(mm) IF(mm) |
48.0±1.0 30.0±1.0 |
32.5±1.0 18.0±1.0 |
22.0±1.0 12.0±1.0 |
16.0±1.0 8.0±1.0 |
48.0±1.0 30.0±1.0 |
32.0±1.0 18.0±1.0 |
22.0±1.0 12.0±1.0 |
16.0±1.0 8.0±1.0 |
| (Adjustable upon request) | (Adjustable upon request) | |||||||
|
Orientation flat direction OF(mm) IF(mm) |
EJ (Dove-Tail)：[OF] (0-1-1)±0.05°/ [IF](0-11)±0.5° or SEMI US (V-Groove)：[OF] (01-1)±0.05°/ [IF](011)±0.5° (Adaptable to both cleavage and bevel) |
EJ (Dove-Tail)：[OF] (0-1-1)±0.5°/ [IF](0-11)±0.5° or SEMI US (V-Groove)：[OF] (01-1)±0.5°/ [IF](011)±0.5° |
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| Notch | OK | Not allowed | Not allowed | Not allowed | OK | Not allowed | Not allowed | Not allowed |
| Edge rounding | Beveled | Beveled | ||||||
| Metalworking precision TTV(μm) |
<5.0 | <5.0 | <5.0 | <5.0 | <10.0 | <10.0 | <10.0 | <10.0 |
| Metalworking precision Warp（μm) |
<10.0 | <10.0 | <10.0 | <10.0 | <15.0 | <15.0 | <15.0 | <15.0 |
| Surfacing Surface |
Mirror | Mirror | ||||||
| Surfacing Back |
Post-lap etching (mirror processing is also available) | Post-lap etching (mirror processing is also available) | ||||||
| Surface processing | Epi-ready | Epi-ready | ||||||
| Laser mark | Option | Option | ||||||
| Packaging form | Cassette | Cassette or individual packaging tray | Cassette | Cassette or individual packaging tray | ||||
VGF-p型
| VGF-p型 Zn-doped | VGF-p型 Zn- and Si-doped | ||||
| Carrier density | VGF (vertical gradient freezing) method | VGF (vertical gradient freezing) method | |||
| Dopant and conductive type | P type: Zn-doped | P type: Zn- and Si-doped | |||
| Carrier density | P-type (0.5-3)×1019 cm-3 (Adjustable within the above range) |
P-type (0.5-3)×1019 cm-3 (Adjustable within the above range) |
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| Dislocation density (EPD) | (cm-2) |
EPDave</=3000 EPDmax</=10000 |
EPDave</=1500 EPDmax</=10000 |
||
| Size | 3-inch | 2-inch | 3-inch | 2-inch | |
| Plane orientation | 1. (100)±0.1° 2. (100) off α°±0.1° towards (011) or (01-1) etc. 3. We will aim to meet your requests. |
1. (100)±0.1° 2. (100) off α°±0.1° towards (011) or (01-1) etc. 3. We will aim to meet your requests. |
|||
| Diameter | (mm) | 76.0±0.1 76.2±0.1 |
50.0±0.1 50.8±0.1 |
76.0±0.1 76.2±0.1 |
50.0±0.1 50.8±0.1 |
| Thickness | (μm) | 300-600 ±15 |
240-450 ±15 |
300-600 ±15 |
240-450 ±15 |
| Orientation flat length |
OF(mm) IF(mm) |
22.0±1.0 12.0±1.0 |
16.0±1.0 8.0±1.0 |
22.0±1.0 12.0±1.0 |
16.0±1.0 8.0±1.0 |
| (Adjustable upon request) | (Adjustable upon request) | ||||
| Orientation flat direction |
OF(mm) IF(mm) |
EJ (Dove-Tail)：[OF] (0-1-1)±0.05°/ [IF](0-11)±0.5° or SEMI US (V-Groove)：[OF] (01-1)±0.05°/ [IF](011)±0.5° (Adaptable to both cleavage and bevel) |
EJ (Dove-Tail)：[OF] (0-1-1)±0.05°/ [IF](0-11)±0.5° or SEMI US (V-Groove)：[OF] (01-1)±0.05°/ [IF](011)±0.5° (Adaptable to both cleavage and bevel) |
||
| Edge rounding | Beveled | Beveled | |||
| Metalworking precision | TTV(μm) | <5.0 | <5.0 | <5.0 | <5.0 |
| Warp（μm) | <10.0 | <10.0 | <10.0 | <10.0 | |
| Surfacing | Surface | Mirror | Mirror | ||
| Back | Post-lap etching (mirror processing is also available) | Post-lap etching (mirror processing is also available) | |||
| Surface processing | Epi-ready | ||||
| Laser mark | Option | Option | |||
| Packaging form | Cassette or individual packaging tray | Cassette or individual packaging tray | |||
半绝缘性能
| VGF 半绝缘性能 | LEC 半绝缘性能 | |||||
| Carrier density | VGF (vertical gradient freezing) method | LEC (Liquid Encapsulated Czochralski) method | ||||
| Dopant and conductive type | 半绝缘性能: Undoped (C-doped) | 半绝缘性能: Undoped (C-doped) | ||||
| Resistivity (at 25℃) |
>/=1×107 Ω cm (Adjustable within the above range) |
>/=1×107 Ω cm (Adjustable within the above range) |
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| Dislocation density (EPD) (cm-2) |
EPDave</=5000 | EPDave</=10^5 | ||||
| Size | 4-inch | 3-inch | 2-inch | 4-inch | 3-inch | 2-inch |
| Plane orientation |
1. (100)±0.1° 2. (100) off 2°±0.1° towards (110) etc. 3. We will aim to meet your requests.。 |
1. (100)±0.1° 2. (100) off 2°±0.1° towards (110) etc. 3. We will aim to meet your requests.。 |
||||
| Diameter (mm) |
100.0±0.1 |
76.0±0.1 76.2±0.1 |
50.0±0.1 50.8±0.1 |
100.0±0.1 |
76.0±0.1 76.2±0.1 |
50.0±0.1 50.8±0.1 |
| Thickness (μm) |
450-625 ±15 |
350-625 ±15 |
300-450 ±15 |
450-625 ±15 |
350-625 ±15 |
300-450 ±15 |
|
Orientation flat length OF(mm) IF(mm) |
32.0±1.0 18.0±1.0 |
22.0±1.0 12.0±1.0 |
16.0±1.0 8.0±1.0 |
32.0±1.0 18.0±1.0 |
22.0±1.0 12.0±1.0 |
16.0±1.0 8.0±1.0 |
| (Adjustable upon request) | (Adjustable upon request) | |||||
|
Orientation flat direction OF(mm) IF(mm) |
EJ (Dove-Tail)：[OF] (0-1-1)±0.5°/ [IF](0-11)±0.5° or SEMI US (V-Groove)：[OF] (01-1)±0.5°/ [IF](011)±0.5° |
EJ (Dove-Tail)：[OF] (0-1-1)±0.5°/ [IF](0-11)±0.5° or SEMI US (V-Groove)：[OF] (01-1)±0.5°/ [IF](011)±0.5° |
||||
| Edge rounding | Beveled | Beveled | ||||
| Metalworking precision TTV(μm) |
<5.0 | <5.0 | <5.0 | <5.0 | <5.0 | <5.0 |
| Metalworking precision TIR(μm) |
<5.0 | <5.0 | <5.0 | <5.0 | <5.0 | <5.0 |
| Metalworking precision Warp（μm) |
<10.0 | <10.0 | <10.0 | <10.0 | <10.0 | <10.0 |
| Surfacing Surface |
Post-lap etching (mirror processing is also available) | Post-lap etching (mirror processing is also available) | ||||
| Surfacing Back |
Post-lap etching (mirror processing is also available) | Post-lap etching (mirror processing is also available) | ||||
| Surface processing | Epi-ready | Epi-ready | ||||
| Laser mark | Option | Option | ||||
| Packaging form | Cassette or individual packaging tray | Cassette or individual packaging tray | ||||
咨询
咨询
同和电子科技有限公司 半导体事业部东京都千代田区外神田四丁目14番1号 秋叶原UDX 22层
TEL：+81-3-6847-1253 FAX：+81-3-6847-1260