DOWA Dowa Electronics Materials Co., Ltd.
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High Purity Metals
LED
Communication
Sensor
Lighting iInfraredj
Display
GaAs-sub
Laser grade
LED grade
Semi-insulating
AlN Template

GaN HEMT Epiwafer on Si

Standard HEMT Structure
Layer Composition Thickness x
4 GaN 1nm  
3 AlxGa1-xN 30nm 0.25
2 GaN 1500nm  
1 Buffer 3300nm  
Substrate Si 625um  

Substrate
Material Silicon
Orientation <111>
Crystal growth method CZ
Type p type
Size(inch) 3,4,6
Thickness(um) 625 or 675
Backside rough

Electrical properties
Hall measurement Typical value
Sheet resistance(ohm/sq) 400
Carrier density(/cm2) 1.00E+13
Mobility(cm2/Vs) 1550

Vertical/Horizontal leak current
Vertical/Horizontal leak current

- Remarks
Recommended application: Switching Devices
Please note that structure, substrate and electrical properties are typical value.
Customizations are available on request.
p-GaN cap layer and AlGaN DH structure are available.



AlN Template

Substrate: c-plane sapphire
Crystal Structure of AlN Epitaxial Layer: wurtzite
Diameter: 50.8 mm } 0.25 mm (typical)
Thickness of Substrate: 430 m } 25 m (typical)
Thickness of AlN Epitaxial Layer: 1 m } 0.3 m (typical)
Surface : c-plane AlN, as grown
effective area < 40 mm (typical)
no cracks by a visual inspection.
Backside : rough
FWHM of X-ray -scan rocking curve : < 150 arcsec for (0002) (typical)
Conductivity : insulating
Packing : packaged fluoroware container
and vacuum-packed.

image

e-mail to: hemt@dowa.co.jp


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