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| Substrate: | c-plane sapphire |
| Crystal Structure of AlN Epitaxial Layer: | wurtzite |
| Diameter: | 50.8 mm ± 0.25 mm (typical) |
| Thickness of Substrate: | 430 μm ± 25 μm (typical) |
| Thickness of AlN Epitaxial Layer: | 1 μm ± 0.3 μm (typical) |
| Surface : | c-plane AlN, as grown effective area < 40 mmΦ (typical) no cracks by a visual inspection. |
| Backside : | rough |
| FWHM of X-ray ω-scan rocking curve : | < 150 arcsec for (0002) (typical) |
| Conductivity : | insulating |
| Packing : | packaged fluoroware container and vacuum-packed. |
| 电子邮箱: yanoh@dowa.co.jp |
