Gallium Nitride HEMT Epiwafer

Gallium Nitride HEMT Epiwafers

Gallium nitride (GaN) is used as the wide band gap material for next generation power semiconductors and high frequency devices. We achieved high voltage resistance and good flatness on the gallium nitride HEMT Epiwafers using our proprietary buffer layers. (GaN on Si HEMT Epiwafers)

We are also engaged in the development of p-GaN cap layers and AlGaN DH structure for the realization of normally-off HEMT Epiwafers.

We also handle GaN Epiwafers on silicon carbide (SiC) and sapphire and AIN templates for high-quality LED (on sapphire wafer).

Applications

GaN on Si HEMT Epiwafer

  • For power semiconductors: Inverter and AC-DC converter
  • For high-frequency devices: For mobile phone base stations

Inverter for air conditioner and so on

Inverter for air conditioner and so on

For high frequency devices such as mobile phone base stations

For high frequency devices
such as mobile phone base stations

Product features

GaN on Si HEMT Epiwafer

  • High voltage resistance (1000V) and low leak current (1E-6A)
  • Crack-free
  • Good bow feature (Bow < 50μm)
  • Wafer size (3, 4, and 6 inches)
  • Capable of handling thick films (4.8μm)
  • p-GaN cap layer and alGaN DH structure

Details of gallium nitride HEMT Epiwafers

The following website provides the details of gallium nitride HEMT Epiwafers.
http://www.dowa-electronics.co.jp/semicon/e/epi/index.html

Contact address for enquiries on gallium nitride HEMT Epiwafers

DOWA Electronics Materials Co., Ltd., Semiconductor Business Unit
Akihabara UDX Building, 22nd Floor Sotokanda 4-14-1 Chiyoda-Ku, Tokyo, 101-0021
TEL:03-6847-1253 FAX:03-6847-1260
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